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SI1302DL-T1-GE3, MOSFETs 30V Vds 20V Vgs SC70-3

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Код товара
8025434401
Артикул
SI1302DL-T1-GE3
Бренд
VISHAY INTERTECHNOLOGY INC.
Case
SC70
Brand:
Vishay Semiconductors
Series:
SI1
Mounting
SMD
Цена по запросу
(от 32 ₽)
Минимальный заказ: 3000 шт.

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Описание

Транзистор SI1302DL-T1-GE3

Технические параметры

CaseSC70
Brand:Vishay Semiconductors
Series:SI1
MountingSMD
Fall Time:7 ns
Rise Time:8 ns
Tradename:TrenchFET
Вес, г0.14
Gate charge0.86nC
Technology:Si
ManufacturerVISHAY
Polarisationunipolar
Subcategory:MOSFETs
Channel Mode:Enhancement
Drain current0.48A
Manufacturer:Vishay
Product Type:MOSFET
Configuration:Single
Kind of channelenhanced
Kind of packagereel, tape
Mounting Style:SMD/SMT
Package / Case:SOT-323-3
Part # Aliases:SI1302DL-T1-BE3
Transistor Type:1 N-Channel
Power dissipation0.18W
Product Category:MOSFET
Qg - Gate Charge:1.4 nC
Type of transistorN-MOSFET
Gate-source voltage±20V
Number of Channels:1 Channel
On-state resistance0.48Ω
Drain-source voltage30V
Transistor Polarity:N-Channel
Power Dissipation (Pd)200mW
Pd - Power Dissipation:310 mW
Total Gate Charge (Qg@Vgs)1.4nC@10V
Vgs - Gate-Source Voltage:-20 V, +20 V
Typical Turn-On Delay Time:5 ns
Input Capacitance (Ciss@Vds)1.6pF@10V
Typical Turn-Off Delay Time:8 ns
Continuous Drain Current (Id)640mA
Id - Continuous Drain Current:640 mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Rds On - Drain-Source Resistance:480 mOhms
Vds - Drain-Source Breakdown Voltage:30 V
Reverse Transfer Capacitance (Crss@Vds)0.2pF@10V
Vgs th - Gate-Source Threshold Voltage:2 V
Factory Pack Quantity: Factory Pack Quantity:3000