SI1022R-T1-GE3, MOSFETs 60V Vds 20V Vgs SC75A
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- Код товара
- 8025539789
- Артикул
- SI1022R-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SI1
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
Цена по запросу
(от 47,42 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 60В, 0,24А, 0,13Вт, SC75A Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SI1 |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | TrenchFET |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-416-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | SC-75, SOT-416 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SI1022R-GE3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 600 pC |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 500mA, 10V |
| Pd - Power Dissipation: | 250 mW |
| Power Dissipation (Max) | 250mW(Ta) |
| Supplier Device Package | SC-75A |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 25 ns |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 4.5 V |
| Typical Turn-Off Delay Time: | 35 ns |
| Drain to Source Voltage (Vdss) | 60 V |
| Id - Continuous Drain Current: | 330 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 100 mS |
| Rds On - Drain-Source Resistance: | 2.25 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 330mA(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |