SI1012CR-T1-GE3, MOSFETs 20V Vds 8V Vgs SC75A
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- Код товара
- 8025542059
- Артикул
- SI1012CR-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SC75A
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
Цена по запросу
(от 20 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 0,63A 3-контактный SC-75A T/R
Технические параметры
| Case | SC75A |
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | SI1 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 11 ns |
| Rise Time: | 16 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.14 |
| Gate charge | 2nC |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VISHAY |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Drain current | 0.63A |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-75-3 |
| Part # Aliases: | SI1012CR-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | SC-75A |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 0.15W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 1.3 nC |
| Process Technology | TrenchFET |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±8V |
| Number of Channels: | 1 Channel |
| On-state resistance | 396mΩ |
| Drain-source voltage | 20V |
| Pulsed drain current | 2A |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SC |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 16 |
| Pd - Power Dissipation: | 240 mW |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 26 ns |
| Id - Continuous Drain Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 240 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 1.3@8V|0.75@4.5V |
| Forward Transconductance - Min: | 7.5 S |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 26 |
| Features of semiconductor devices | ESD protected gate |
| Rds On - Drain-Source Resistance: | 396 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.63 |
| Typical Input Capacitance @ Vds (pF) | 43@10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 396@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |