SFH 314 FA, Phototransistor, 870 nm, 80 °, 200 mW, 2 Pins, Side Looking
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- Код товара
- 8063435944
- Артикул
- SFH 314 FA
- Бренд
- AMS OSRAM GROUP
- Type:
- Silicon NPN Phototransistor
- Width
- 5.9mm
- Brand:
- ams OSRAM
- Mounting
- Through Hole
Цена по запросу
(от 139 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Это семейство кремниевыx фототранзисторов NPN производства OSRAM Opto Semiconductors представляет собой линейку устройств со сквозными отверстиями диаметром 5 мм (T-1 3/4).
Технические параметры
| Type: | Silicon NPN Phototransistor |
| Width | 5.9mm |
| Brand: | ams OSRAM |
| Mounting | Through Hole |
| Polarity | NPN |
| Product: | Phototransistors |
| Pin Count | 2 |
| Packaging: | Bulk |
| Вес, г | 0.35 |
| Wavelength: | 870 nm |
| Dark Current | 200(nA) |
| Package Type | 5mm(T-1 3/4) |
| Rad Hardened | No |
| Subcategory: | Optical Detectors and Sensors |
| Dark Current: | 200 nA |
| Manufacturer: | ams OSRAM |
| Mounting Type | Through Hole |
| Product Type: | Phototransistors |
| Light Current: | 2.5 mA |
| Number of Pins | 2 |
| Qualification: | AEC-Q101 |
| Mounting Style: | Through Hole |
| Package / Case: | T-1 3/4 |
| Part # Aliases: | Q62702P1675 Q62702P1675 |
| Peak Wavelength | 870(nm) |
| Peak Wavelength: | 870 nm |
| Collector Current | 50mA |
| Lens Color/Style: | Black |
| Power Dissipation | 0.2(W) |
| Product Category: | Phototransistors |
| Typical Fall Time | 14µs |
| Typical Rise Time | 14µs |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Spectrums Detected | Infrared |
| Half-Intensity Angle | 80(deg) |
| Maximum Dark Current | 200nA |
| Operating Temp Range | -40C to 100C |
| Phototransistor Type | Phototransistor |
| Угол Обзора | 80° |
| Collector Current (DC) | 0.05(A) |
| Pd - Power Dissipation: | 200 mW |
| Angle of Half Sensitivity | 80 ° |
| Collector-Emitter Voltage | 70(V) |
| Maximum Wavelength Detected | 1080nm |
| Minimum Wavelength Detected | 740nm |
| Half Intensity Angle Degrees: | 40 deg |
| Spectral Range of Sensitivity | 740 → 1080 nm |
| Maximum Operating Temperature: | +100 C |
| Minimum Operating Temperature: | -40 C |
| Emitter-Collector Voltage (Max) | 7(V) |
| Энергопотребление | 200мВт |
| Maximum On-State Collector Current: | 50 mA |
| Количество Выводов | 2вывод(-ов) |
| Collector- Emitter Voltage VCEO Max: | 70 V |
| Collector-Emitter Breakdown Voltage: | 70 V |
| Operating Temperature Classification | Industrial |
| Collector-Emitter Saturation Voltage: | 150 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Стиль Корпуса Транзистора | Radial Leaded |
| Типичное Значение Длины Волны | 870нм |