SFH 309 FA-3/4 , 24 ° IR Phototransistor, Through Hole 2-Pin 3mm (T-1) package
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- Код товара
- 8009761954
- Артикул
- SFH 309 FA-3/4
- Бренд
- AMS OSRAM GROUP
- RoHS
- Details
- Type
- Silicon NPN Phototransistor
- Brand
- OSRAM Opto Semiconductors
- Power
- 165mW
Цена по запросу
(от 53 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Это семейство кремниевыx фототранзисторов NPN производства OSRAM Opto Semiconductors представляет собой линейку устройств со сквозными отверстиями диаметром 3 мм (T-1).
Технические параметры
| RoHS | Details |
| Type | Silicon NPN Phototransistor |
| Brand | OSRAM Opto Semiconductors |
| Power | 165mW |
| Width | 4mm |
| Height | 5.2 mm |
| Length | 4 mm |
| Product | Phototransistors |
| LED lens | black with IR filter |
| Mounting | THT |
| Polarity | NPN |
| Fall Time | 7 us |
| Rise Time | 7 us |
| Wavelength | 730…1120nm |
| Вес, г | 5 |
| Active area | 0.038mm2 |
| Dark current | 1nA |
| LED diameter | 3mm |
| Manufacturer | ams OSRAM |
| Package Type | 3mm(T-1) |
| Light Current | 2 mA |
| Mounting Type | Through Hole |
| Viewing angle | 12° |
| Mounting Style | Through Hole |
| Number of Pins | 2 |
| Output Current | - |
| Package / Case | T-1 |
| Part # Aliases | Q62702P3590 |
| Peak Wavelength | 900 nm |
| Lens Color/Style | Black |
| Product Category | Phototransistors |
| Collector Current | 15mA |
| Typical Fall Time | 7µs |
| Typical Rise Time | 7µs |
| Number of Channels | 1 |
| Spectrums Detected | Infrared |
| Maximum Dark Current | 200nA |
| Type of photoelement | phototransistor |
| Factory Pack Quantity | 2000 |
| Maximum Light Current | 4500µA |
| Pd - Power Dissipation | 165 mW |
| Propagation Delay - Max | - |
| Operating Supply Voltage | - |
| Angle of Half Sensitivity | 24 ° |
| Collector-emitter voltage | 35V |
| Maximum Wavelength Detected | 1120nm |
| Minimum Wavelength Detected | 730nm |
| Half Intensity Angle Degrees | 12 deg |
| Maximum Operating Temperature | +100 C |
| Minimum Operating Temperature | -40 C |
| Spectral Range of Sensitivity | 730 → 1120 nm |
| Wavelength of peak sensitivity | 900nm |
| Maximum On-State Collector Current | 15 mA |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Collector-Emitter Breakdown Voltage | 35 V |
| Collector-Emitter Saturation Voltage | 200 mV |