SCT3080ALGC11, SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025543824
- Артикул
- SCT3080ALGC11
- Бренд
- Rohm
- Brand:
- ROHM Semiconductor
- RDS-on
- 104@18V MOhm
- Series:
- SCT3x
- Mounting
- Through Hole
Цена по запросу
(от 1 570 ₽)
Минимальный заказ: 30 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Карбидокремниевый силовой МОП-транзистор, N-канальный, 30А, 650В, 0.08Ом, 18В, 5.6В Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| Brand: | ROHM Semiconductor |
| RDS-on | 104@18V MOhm |
| Series: | SCT3x |
| Mounting | Through Hole |
| Fall Time: | 16 ns |
| Packaging: | Tube |
| Rise Time: | 26 ns |
| Вес, г | 0.14 |
| Lead Finish | Matte Tin |
| Technology: | SiC |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Part # Aliases: | SCT3080AL |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 48 nC |
| Typical Fall Time | 16 ns |
| Typical Rise Time | 26 ns |
| Package Dimensions | 16x5x21 |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55 to 175 °C |
| Pd - Power Dissipation: | 134 W |
| Typical Turn-On Delay Time | 16 ns |
| Vgs - Gate-Source Voltage: | -4 V, +22 V |
| Maximum Gate Source Voltage | -4 to 22 V |
| Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 27 ns |
| Id - Continuous Drain Current: | 30 A |
| Maximum Operating Temperature: | +175 C |
| Maximum Processing Temperature | 265 |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 3.8 S |
| Maximum Continuous Drain Current | 30 A |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |