SBAV99WT1G, Диод: выпрямительный
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017548171
- Артикул
- SBAV99WT1G
- Бренд
- ON Semiconductor***
- HTS
- COMPONENTS
- PPAP
- Yes
- Type
- Small Signal Switching Diode
- Grade
- Automotive
Цена по запросу
(от 4,75 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Диод выпрямительный сборка 70В 215мА
Технические параметры
| HTS | COMPONENTS |
| PPAP | Yes |
| Type | Small Signal Switching Diode |
| Grade | Automotive |
| Speed | Fast Recovery =< 500ns, > 200mA(Io) |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Technology | Standard |
| Вес, г | 0.013 |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Dual Series |
| Mounting Type | Surface Mount |
| Package Width | 1.24 |
| Qualification | AEC-Q101 |
| Package / Case | SC-70, SOT-323 |
| Package Height | 0.85 |
| Package Length | 2 |
| EDA / CAD Models | SBAV99WT1G by Ultra Librarian |
| Supplier Package | SC-70 |
| Diode Configuration | 1 Pair Series Connection |
| Standard Package Name | SOT |
| Supplier Device Package | SC-70-3(SOT323) |
| Peak Forward Voltage (V) | 1.25@0.15A |
| Peak Reverse Current (uA) | 1 |
| Supplier Temperature Grade | Automotive |
| Reverse Recovery Time (trr) | 6 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
| Maximum DC Reverse Voltage (V) | 100 |
| Maximum Diode Capacitance (pF) | 1.5 |
| Maximum Power Dissipation (mW) | 300 |
| Peak Reverse Recovery Time (ns) | 6 |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Peak Reverse Repetitive Voltage (V) | 100 |
| Peak Non-Repetitive Surge Current (A) | 2 |
| Maximum Continuous Forward Current (A) | 0.215 |
| Maximum Junction Ambient Thermal Resistance | 625°C/W |
| Current - Average Rectified (Io) (per Diode) | 215mA |