RSQ045N03TR, MOSFETs N-CH 30V 4.5A TSMT6
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025506738
- Артикул
- RSQ045N03TR
- Бренд
- Rohm
- ECCN
- EAR99
- Type
- MOSFET
- HTSUS
- 8541.21.0095
- Series
- RSQ045N03
Цена по запросу
(от 80 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 30 В 4,5 А (Ta) 600 МВт (Ta) для поверxностного монтажа TSMT6 (SC-95)
Технические параметры
| ECCN | EAR99 |
| Type | MOSFET |
| HTSUS | 8541.21.0095 |
| Series | RSQ045N03 |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Product | MOSFET Small Signals |
| FET Type | N-Channel |
| Fall Time | 19 ns |
| Packaging | Reel |
| Rise Time | 19 ns |
| Vgs (Max) | В±20V |
| Technology | Si |
| Вес, г | 0.14 |
| RoHS Status | ROHS3 Compliant |
| Subcategory | Transistors |
| Channel Mode | Enhancement |
| Manufacturer | ROHM Semiconductor |
| Product Type | MOSFETs |
| REACH Status | REACH Unaffected |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-457T-6 |
| Part # Aliases | RSQ045N03 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFETs |
| Qg - Gate Charge | 6.8 nC |
| Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Base Product Number | RSQ045 -> |
| Transistor Polarity | N-Channel |
| Operating Temperature | 150В°C (TJ) |
| Pd - Power Dissipation | 1.25 W |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 4.5A, 10V |
| Power Dissipation (Max) | 600mW (Ta) |
| Supplier Device Package | TSMT6 (SC-95) |
| Vgs - Gate-Source Voltage | -20 V, +20 V |
| Typical Turn-On Delay Time | 12 ns |
| Typical Turn-Off Delay Time | 41 ns |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 5V |
| Id - Continuous Drain Current | 4.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Drain to Source Voltage (Vdss) | 30V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance | 27 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Current - Continuous Drain (Id) @ 25В°C | 4.5A (Ta) |