RF4E110GNTR, Диод: выпрямительный
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070174094
- Артикул
- RF4E110GNTR
- Бренд
- Rohm
- Type
- N Channel
- Brand:
- ROHM Semiconductor
- Fall Time:
- 3 ns
- Rise Time:
- 5.5 ns
Цена по запросу
(от 57,52 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В 11 А 11.3mOhm@11A,10 В 2 Вт 2.5V@250uA N-канальные МОП-транзисторы HUML2020-L8 соответствуют требованиям ROHS
Технические параметры
| Type | N Channel |
| Brand: | ROHM Semiconductor |
| Fall Time: | 3 ns |
| Rise Time: | 5.5 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | ROHM Semiconductor |
| Package/Case: | DFN-2020-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | RF4E110GN |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7.4 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | - |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 2W |
| Pd - Power Dissipation: | 2 W |
| Total Gate Charge (Qg@Vgs) | 7.4nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 9 ns |
| Input Capacitance (Ciss@Vds) | 504pF@15V |
| Typical Turn-Off Delay Time: | 21 ns |
| Continuous Drain Current (Id) | 11A |
| Id - Continuous Drain Current: | 11 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 6 S |
| Rds On - Drain-Source Resistance: | 11.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |