PMV45EN2R, MOSFETs SOT23 N-CH 30V 4.1A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8026252901
- Артикул
- PMV45EN2R
- Бренд
- Nexperia B.V.
- PPAP
- No
- RDS-on
- 42@10V mOhm
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 19,40 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30V 4.1A с 3-контактным разъемом SOT-23 T/R
Технические параметры
| PPAP | No |
| RDS-on | 42@10V mOhm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.14 |
| Lead Finish | Tin |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Small Signal |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time | 2 ns |
| Typical Rise Time | 12 ns |
| Process Technology | TMOS |
| Operating Temperature | -55 to 150 °C |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 2 |
| Typical Rise Time (ns) | 12 |
| Typical Turn-On Delay Time | 3 ns |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 11 ns |
| Maximum Drain Source Voltage | 30 V |
| Maximum Power Dissipation (mW) | 1115 |
| Typical Gate Charge @ 10V (nC) | 3.6 |
| Typical Gate Charge @ Vgs (nC) | 3.6 10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Output Capacitance (pF) | 50 |
| Typical Turn-On Delay Time (ns) | 3 |
| Maximum Continuous Drain Current | 5.1 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.6 |
| Typical Turn-Off Delay Time (ns) | 11 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.4 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.5 |
| Typical Gate to Source Charge (nC) | 0.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 209 15V |
| Maximum Drain Source Resistance (mOhm) | 42 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 16 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.115 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 17 15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 4.1 |