PMGD290XN,115, MOSFETs SOT363 2NCH 20V .86A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025496605
- Артикул
- PMGD290XN,115
- Бренд
- Nexperia B.V.
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Width
- 1.35mm
- Brand:
- Nexperia
Цена по запросу
(от 20 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Mosfet-матрица 2-канальная (двойная) 20 В 860 мА 410 МВт для поверxностного монтажа 6-TSSOP
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Width | 1.35mm |
| Brand: | Nexperia |
| Series | TrenchMOSв„ў -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | 2 N-Channel (Dual) |
| Product: | MOSFET Small Signal |
| Pin Count | 6 |
| Fall Time: | 6 ns |
| Rise Time: | 11 ns |
| Вес, г | 0.14 |
| FET Feature | Logic Level Gate |
| Power - Max | 410mW |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-363 |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Mounting Type | Surface Mount |
| Package/Case: | TSSOP-6 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934057731115 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 720 pC |
| Vgs(th) (Max) @ Id | 1.5V @ 250ВµA |
| Base Product Number | PMGD290 -> |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 200mA, 4.5V |
| Pd - Power Dissipation: | 410 mW |
| Supplier Device Package | 6-TSSOP |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 410 mW |
| Typical Gate Charge @ Vgs | 0.72 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 5 ns |
| Gate Charge (Qg) (Max) @ Vgs | 0.72nC @ 4.5V |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 11 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 860 mA |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.5V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 350 mΩ |
| кол-во в упаковке | 3000 |
| Maximum Continuous Drain Current | 860 mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 34pF @ 20V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Current - Continuous Drain (Id) @ 25В°C | 860mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |