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NJVMJD127T4G, 100V 1000@4V,4A PNP 8A 20W DPAK-3 DarlIngton TransIstors

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Код товара
8026247646
Артикул
NJVMJD127T4G
Бренд
ON Semiconductor***
Brand:
onsemi
Packaging:
Reel, Cut Tape
Вес, г
0.39
Power - Max
20 W
Цена по запросу
(от 43,28 ₽)

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Описание

Биполярный (BJT) транзистор PNP - Darlington 100 В 8 А 20 Вт для поверxностного монтажа DPAK

Технические параметры

Brand:onsemi
Packaging:Reel, Cut Tape
Вес, г0.39
Power - Max20 W
Subcategory:Transistors
Manufacturer:onsemi
Mounting TypeSurface Mount
Product Type:Darlington Transistors
Configuration:Single
Package / CaseTO-252-3, DPAK(2 Leads+Tab), SC-63
Qualification:AEC-Q100
Transistor TypePNP
Product Category:Darlington Transistors
Transistor Polarity:PNP
Operating Temperature-65°C ~ 150°C(TJ)
Collector Current (Ic)8A
Factory Pack Quantity:2500
Power Dissipation (Pd)20W
Supplier Device PackageDPAK
DC Current Gain hFE Max:100
Emitter- Base Voltage VEBO:5 V
DC current gain (hFE@Vce,Ic)1000@4V, 4A
Collector- Base Voltage VCBO:100 V
Maximum DC Collector Current:8 A
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
Current - Collector (Ic) (Max)8 A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-65 C
Collector-emitter voltage (Vceo)100V
Current - Collector Cutoff (Max)10µA
Maximum Collector Cut-off Current:10 uA
Collector cut-off current (Icbo@Vcb)10uA
Collector- Emitter Voltage VCEO Max:100 V
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Voltage - Collector Emitter Breakdown (Max)100 V
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)4V@8A, 80mA

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