NJD35N04T4G, 350V 2000@2V,2A NPN 4A 45W DPAK DarlIngton TransIstors ROHS
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- Код товара
- 8044372788
- Артикул
- NJD35N04T4G
- Бренд
- ON Semiconductor***
- Width
- 7.49mm
- Brand:
- onsemi
- Pin Count
- 3
- Вес, г
- 0.48
Цена по запросу
(от 460 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Width | 7.49mm |
| Brand: | onsemi |
| Pin Count | 3 |
| Вес, г | 0.48 |
| Package Type | DPAK(TO-252) |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Package/Case: | TO-252-3(D-PAK) |
| Product Type: | Darlington Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type | NPN |
| Product Category: | Darlington Transistors |
| Transistor Polarity: | NPN |
| Factory Pack Quantity: | 2500 |
| Minimum DC Current Gain | 2000 |
| Pd - Power Dissipation: | 45 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 45 W |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 5 V |
| Collector- Base Voltage VCBO: | 700 V |
| Continuous Collector Current: | 4 A |
| Maximum DC Collector Current: | 4 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Maximum Collector Base Voltage | 700 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 2000 at 2 A at 2 V, 300 at 4 A at 2 V |
| Maximum Collector Cut-off Current | 250mA |
| Maximum Collector Emitter Voltage | 350 V |
| Collector- Emitter Voltage VCEO Max: | 350 V |
| Maximum Continuous Collector Current | 4 A |
| Maximum Base Emitter Saturation Voltage | 2 V |
| Maximum Collector Emitter Saturation Voltage | 1.5 V |