NCV8440ASTT3G, MOSFETs 2.6A, 52V N-CH, CLAM
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005374269
- Артикул
- NCV8440ASTT3G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 1160 ns
- Rise Time:
- 1525 ns
- Вес, г
- 0.26
Цена по запросу
(от 139,91 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 1160 ns |
| Rise Time: | 1525 ns |
| Вес, г | 0.26 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | SOT-223-3 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.5 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 4000 |
| Pd - Power Dissipation: | 1.69 W |
| Vgs - Gate-Source Voltage: | -15 V, +15 V |
| Typical Turn-On Delay Time: | 375 ns |
| Typical Turn-Off Delay Time: | 1530 ns |
| Id - Continuous Drain Current: | 2.6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 52 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |