NCV5701CDR2G, Gate Drivers HIGH CURRENT IGBT GATE DR
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005374034
- Артикул
- NCV5701CDR2G
- Бренд
- ON Semiconductor***
- Type:
- Half-Bridge
- Brand:
- onsemi
- Product:
- IGBT, MOSFET Gate Drivers
- Features:
- DESAT Protection with Programmable Delay, Separate Outputs for VOL and VOH
Цена по запросу
(от 283,47 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Драйверы для управления затвором HIGH CURRENT IGBT GATE DR
Технические параметры
| Type: | Half-Bridge |
| Brand: | onsemi |
| Product: | IGBT, MOSFET Gate Drivers |
| Features: | DESAT Protection with Programmable Delay, Separate Outputs for VOL and VOH |
| Shutdown: | Shutdown |
| Fall Time: | 7.9 ns |
| Rise Time: | 9.2 ns |
| Вес, г | 0.08 |
| Technology: | Si |
| Subcategory: | PMIC-Power Management ICs |
| Manufacturer: | onsemi |
| Product Type: | Gate Drivers |
| Configuration: | Inverting |
| Qualification: | AEC-Q100 |
| Mounting Style: | SMD/SMT |
| Output Current: | 4 A |
| Output Voltage: | 5 V |
| Package / Case: | SOIC-8 |
| Product Category: | Gate Drivers |
| Number of Drivers: | 1 Driver |
| Number of Outputs: | 1 Output |
| Supply Voltage - Max: | 35 V |
| Supply Voltage - Min: | 5.5 V |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 700 mW |
| Propagation Delay - Max: | 70 ns |
| Operating Supply Current: | 900 uA |
| Maximum Turn-On Delay Time: | 75 ns |
| Maximum Turn-Off Delay Time: | 75 ns |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |