MT53E512M32D1ZW-046BWT:B, DRAM LPDDR4 16Gbit 32 200/264 TFBGA 1 WT
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- Код товара
- 8048801120
- Артикул
- MT53E512M32D1ZW-046BWT:B
- Бренд
- Micron Technology Inc
- PPAP
- No
- Mounting
- Surface Mount
- DRAM Type
- Mobile LPDDR4 SDRAM
- Pin Count
- 200
Цена по запросу
(от 41 630 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Чип DRAM Mobile LPDDR4 SDRAM 16 Гбит 512 М x 32 1,1 В/1,8 В 200-контактный TFBGA
Технические параметры
| PPAP | No |
| Mounting | Surface Mount |
| DRAM Type | Mobile LPDDR4 SDRAM |
| Pin Count | 200 |
| Automotive | No |
| Вес, г | 1 |
| IC Mounting | Surface Mount |
| No. of Pins | 200Pins |
| PCB changed | 200 |
| Part Status | Active |
| Organization | 512Mx32 |
| Корпус | FBGA |
| Package Width | 10 |
| Interface Type | LVSTL |
| Memory Density | 16Gbit |
| Package Length | 14.5 |
| Supplier Package | TFBGA |
| IC Case / Package | TFBGA |
| Chip Density (bit) | 16G |
| Process Technology | 1anm |
| Supply Voltage Nom | 1.1V |
| Clock Frequency Max | 2.133GHz |
| Тип памяти | DDR4 |
| Data Bus Width (bit) | 32 |
| Memory Configuration | 512M x 32bit |
| Standard Package Name | BGA |
| Operating Current (mA) | 400 |
| Address Bus Width (bit) | 19 |
| Объем памяти | 16Гбит |
| Maximum Access Time (ns) | 3.5 |
| Maximum Clock Rate (MHz) | 4266 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 64M |
| Number of Bits/Word (bit) | 32 |
| Number of I/O Lines (bit) | 32 |
| Operating Temperature Max | 85°C |
| Operating Temperature Min | -25°C |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Supply Voltage (V) | 1.17|1.95 |
| Minimum Operating Supply Voltage (V) | 1.06|1.7 |