KSC5603DTU, Trans GP BJT NPN 800V 3A 100000mW 3-Pin(3+Tab) TO-220 Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002308390
- Артикул
- KSC5603DTU
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Type
- NPN
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 330 ₽)
Минимальный заказ: 93 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 800V 3A 100000 МВт 3-контактная (3 + язычка) трубка TO-220
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| Brand: | onsemi/Fairchild |
| EU RoHS | Compliant with Exemption |
| Series: | KSC5603D |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Part # Aliases: | KSC5603DTU_NL |
| Product Category | Bipolar Power |
| Supplier Package | TO-220 |
| Power Dissipation | 100Вт |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN |
| Standard Package Name | TO |
| DC Current Gain hFE Min | 20hFE |
| Minimum DC Current Gain | 20@400mA@3V|20@5mA@10V |
| Pd - Power Dissipation: | 100 W |
| DC Current Gain hFE Max: | 35 |
| Maximum Base Current (A) | 2 |
| Gain Bandwidth Product fT: | 5 MHz |
| Emitter- Base Voltage VEBO: | 12 V |
| Number of Elements per Chip | 1 |
| Continuous Collector Current | 3А |
| Collector Emitter Voltage Max | 800В |
| Collector- Base Voltage VCBO: | 1.6 kV |
| Continuous Collector Current: | 3 A |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 100000 |
| DC Collector/Base Gain hfe Min: | 20 |
| DC Усиление Тока hFE | 20hFE |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 12 |
| Maximum Collector Base Voltage (V) | 1600 |
| Maximum Transition Frequency (MHz) | 5(Typ) |
| Частота Перехода ft | 5МГц |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Through Hole |
| Collector- Emitter Voltage VCEO Max: | 800 V |
| Operating Junction Temperature (°C) | 150 |
| Collector-Emitter Saturation Voltage: | 1.2 V |
| Maximum Collector-Emitter Voltage (V) | 800 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@50mA@500mA|1.2@0.4A@2A |
| Полярность Транзистора | NPN |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.25@25mA@250mA|2.5@50mA@500mA|2.5@0.2mA@1A |
| Стиль Корпуса Транзистора | TO-220 |
| Максимальная Рабочая Температура | 150 C |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |