IXYT25N250CHV, Type N-Channel IGBT, 25 A 2500 V, 3-Pin TO-268HV, Surface
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014479074
- Артикул
- IXYT25N250CHV
- Бренд
- Ixys Corporation
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Brand:
- IXYS
- Series
- XPTв„ў ->
Цена по запросу
(от 10 710 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Теxнология XPT™ с тонкими пластинами Низкое напряжение в режиме ожидания VCE (sat) Встроенные диоды быстрого восстановления Положительный температурный коэффициент VCE (sat)
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Brand: | IXYS |
| Series | XPTв„ў -> |
| Package | Tube |
| Series: | High Voltage |
| Pin Count | 3 |
| Input Type | Standard |
| Packaging: | Tube |
| Вес, г | 1.7 |
| Gate Charge | 147nC |
| Power - Max | 937W |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Package Type | TO-268HV |
| REACH Status | REACH Unaffected |
| Subcategory: | IGBTs |
| Manufacturer: | IXYS |
| Mounting Type | Surface Mount |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Package / Case | TO-268-3, DВіPak (2 Leads + Tab), TO-268AA |
| Test Condition | 1250V, 25A, 5Ohm, 15V |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-268HV-2 |
| Switching Energy | 8.3mJ (on), 7.3mJ (off) |
| Product Category: | IGBT Transistors |
| California Prop 65 | Warning Information |
| Moisture Sensitive: | Yes |
| Number of Transistors | 1 |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Td (on/off) @ 25В°C | 15ns/230ns |
| Collector Current (Ic) | 95A |
| Power Dissipation (Pd) | 937W |
| Pd - Power Dissipation: | 937 W |
| Supplier Device Package | TO-268HV (IXYT) |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 25A |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 937 W |
| Reverse Recovery Time (trr) | 34ns |
| Turn?on Delay Time (Td(on)) | 15ns |
| Maximum Gate Emitter Voltage | ±20 V, ±30V |
| Turn?on Switching Loss (Eon) | 8.3mJ |
| Gate-Emitter Leakage Current: | +/-100 nA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Total Gate Charge (Qg@Ic,Vge) | 147nC |
| Turn?off Delay Time (Td(off)) | 230ns |
| Current - Collector (Ic) (Max) | 95A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Turn?off Switching Loss (Eoff) | 7.3mJ |
| Current - Collector Pulsed (Icm) | 235A |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Diode Reverse Recovery Time (Trr) | 34ns |
| Maximum Collector Emitter Voltage | 2500 V |
| Collector- Emitter Voltage VCEO Max: | 2.5 kV |
| Continuous Collector Current Ic Max: | 95 A |
| Maximum Continuous Collector Current | 95 A |
| Collector-Emitter Saturation Voltage: | 4 V |
| Continuous Collector Current at 25 C: | 95 A |
| Collector-Emitter Breakdown Voltage (Vces) | 2.5kV |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@15V, 25A |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |