IXTY01N100D-TRL, MOSFETs TO-252 1000V .4A N-CH MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006243885
- Артикул
- IXTY01N100D-TRL
- Бренд
- Ixys Corporation
- Type:
- Depletion Mode
- Brand:
- IXYS
- Product:
- MOSFET Modules
- Fall Time:
- 64 ns
Цена по запросу
(от 555,97 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | Depletion Mode |
| Brand: | IXYS |
| Product: | MOSFET Modules |
| Fall Time: | 64 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 10 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Discrete and Power Modules |
| Manufacturer: | IXYS |
| Package/Case: | TO-252-3 |
| Product Type: | MOSFET Modules |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | MOSFET Modules |
| Transistor Polarity: | N-Channel |
| Vr - Reverse Voltage: | 25 V |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 25 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7 ns |
| Typical Turn-Off Delay Time: | 34 ns |
| Id - Continuous Drain Current: | 400 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 80 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs th - Gate-Source Threshold Voltage: | -4.5 V |