IXFN200N07, MOSFET Modules 70V 200A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8019881979
- Артикул
- IXFN200N07
- Бренд
- Ixys Corporation
- Brand:
- IXYS
- Series:
- HiPerFET
- Product:
- Power MOSFET Modules
- Fall Time:
- 60 ns
Цена по запросу
(от 7 280 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | IXYS |
| Series: | HiPerFET |
| Product: | Power MOSFET Modules |
| Fall Time: | 60 ns |
| Packaging: | Tube |
| Rise Time: | 60 ns |
| Tradename: | HyperFET |
| Вес, г | 30 |
| Technology: | Si |
| Subcategory: | Discrete Semiconductor Modules |
| Manufacturer: | IXYS |
| Product Type: | Discrete Semiconductor Modules |
| Configuration: | Single |
| Mounting Style: | Chassis Mount |
| Package / Case: | SOT-227-4 |
| Product Category: | Discrete Semiconductor Modules |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 520 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 30 ns |
| Typical Turn-Off Delay Time: | 100 ns |
| Id - Continuous Drain Current: | 200 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 6 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 70 V |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |