IXFN100N50P,MOSFET Transistor, PolarFET, N Channel, 100 A, 500 V, 0.049 ohm, 10 V, 5 V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8692012269
- Артикул
- IXFN100N50P
- Бренд
- Ixys Corporation
- Type:
- HiperFET
- Brand:
- IXYS
- Series:
- IXFN100N50
- Product:
- Power MOSFET Modules
Цена по запросу
(от 13 400 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП 500В 90A 1040Вт SOT227B Характеристики Категория Транзистор Тип модуль Вид MOSFET
Технические параметры
| Type: | HiperFET |
| Brand: | IXYS |
| Series: | IXFN100N50 |
| Product: | Power MOSFET Modules |
| Fall Time: | 26 ns |
| Packaging: | Tube |
| Rise Time: | 29 ns |
| Tradename: | HiPerFET |
| Вес, г | 37.41 |
| Technology: | Si |
| Subcategory: | Discrete Semiconductor Modules |
| Manufacturer: | IXYS |
| Product Type: | Discrete Semiconductor Modules |
| Configuration: | Single |
| Mounting Style: | Screw Mounts |
| Package / Case: | SOT-227-4 |
| Product Category: | Discrete Semiconductor Modules |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 1.04 mW |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 36 ns |
| Typical Turn-Off Delay Time: | 110 ns |
| Id - Continuous Drain Current: | 90 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 49 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |