IS61LV25616AL-10TLI, IC: SRAM memory; 256kx16bit; 3.3V; 10ns; TSOP44 II; parallel
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- Код товара
- 8052364205
- Артикул
- IS61LV25616AL-10TLI
- Бренд
- Integrated Silicon Solution
- ECCN
- 3A991B2A
- HTSUS
- 8542.32.0041
- Width
- 10.29mm
- Package
- Tray
Цена по запросу
(от 1 283,51 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
SRAM - Асинxронная микросxема памяти 4 Мб (256 КБ x 16), параллельная 10нс 44-TSOP II
Технические параметры
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Width | 10.29mm |
| Package | Tray |
| Low Power | Yes |
| Pin Count | 44 |
| Technology | SRAM - Asynchronous |
| Вес, г | 0.47 |
| Access Time | 10ns |
| Memory Size | 4Mb (256K x 16) |
| Memory Type | Volatile |
| RoHS Status | ROHS3 Compliant |
| Timing Type | Asynchronous |
| Organisation | 256k x 16 bit |
| Package Type | TSOP |
| REACH Status | REACH Unaffected |
| Memory Format | SRAM |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Number of Words | 256k |
| Memory Interface | Parallel |
| Voltage - Supply | 3.135V ~ 3.6V |
| Address Bus Width | 18bit |
| Operating Temperature | -40В°C ~ 85В°C (TA) |
| Number of Bits per Word | 16bit |
| Supplier Device Package | 44-TSOP II |
| Maximum Random Access Time | 10ns |
| Maximum Operating Temperature | +85 °C |
| Minimum Operating Temperature | -40 °C |
| Write Cycle Time - Word, Page | 10ns |
| Maximum Operating Supply Voltage | 3.6 V |
| Minimum Operating Supply Voltage | 3.135 V |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |