IS43R86400F-5TLI, DRAM 512M 64Mx8 200MHz DDR 2.5V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004739777
- Артикул
- IS43R86400F-5TLI
- Бренд
- Integrated Silicon Solution
- ECCN
- EAR99
- HTSUS
- 8542.32.0028
- Type:
- SDRAM-DDR
- Brand:
- ISSI
Цена по запросу
(от 2 730 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Микросxема памяти SDRAM - DDR 512 Мб (64 М x 8) Параллельная 200 МГц 700 с 66-TSOP II
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8542.32.0028 |
| Type: | SDRAM-DDR |
| Brand: | ISSI |
| Package | Tray |
| Series: | IS43R86400F |
| Technology | SDRAM - DDR |
| Вес, г | 4.86 |
| Серия | IS43R86400F |
| Access Time | 700ps |
| Memory Size | 512Mb (64M x 8) |
| Memory Type | Volatile |
| RoHS Status | ROHS3 Compliant |
| Access Time: | 700 ps |
| Memory Size: | 512 Mbit |
| REACH Status | REACH Unaffected |
| Subcategory: | Memory & Data Storage |
| Корпус | TSOP-66 |
| Manufacturer: | ISSI |
| Memory Format | DRAM |
| Mounting Type | Surface Mount |
| Organization: | 64 M x 8 |
| Product Type: | DRAM |
| Package / Case | 66-TSSOP (0.400"", 10.16mm Width) |
| Clock Frequency | 200MHz |
| Data Bus Width: | 8 bit |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSOP-66 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.5V ~ 2.7V |
| Product Category: | DRAM |
| Moisture Sensitive: | Yes |
| Тип памяти | DRAM |
| Operating Temperature | -40В°C ~ 85В°C (TA) |
| Supply Current - Max: | 90 mA |
| Supply Voltage - Max: | 2.7 V |
| Supply Voltage - Min: | 2.3 V |
| Supplier Device Package | 66-TSOP II |
| Объем памяти | 512 |
| Maximum Clock Frequency: | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Напряжение питания, В | 2.5 |
| Рабочая температура, °C | (-40, 85) |
| Factory Pack Quantity: Factory Pack Quantity: | 108 |
| Максимальная тактовая частота (скорость) | 200МГц |