IS43DR16320E-25DBLI, DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin TW-BGA
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- Код товара
- 8002237354
- Артикул
- IS43DR16320E-25DBLI
- Бренд
- Integrated Silicon Solution
- PPAP
- No
- Type:
- SDRAM-DDR2
- Brand:
- ISSI
- Series:
- IS43DR16320E
Цена по запросу
(от 730 ₽)
Минимальный заказ: 209 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Микросxема DRAM DDR2 SDRAM 512 Мбит 32Mx16 1,8 В 84-контактный TW-BGA
Технические параметры
| PPAP | No |
| Type: | SDRAM-DDR2 |
| Brand: | ISSI |
| Series: | IS43DR16320E |
| Mounting | Surface Mount |
| DRAM Type | DDR2 SDRAM |
| ECCN (US) | EAR99 |
| Pin Count | 84 |
| Automotive | No |
| Вес, г | 0.16 |
| PCB changed | 84 |
| Part Status | Active |
| Тип DRAM | DDR2 |
| Access Time: | 400 ps |
| Memory Size: | 512 Mbit |
| Organization | 32Mx16 |
| Subcategory: | Memory & Data Storage |
| Manufacturer: | ISSI |
| Organization: | 32 M x 16 |
| Product Type: | DRAM |
| Interface Type | SSTL_18 |
| Data Bus Width: | 16 bit |
| Mounting Style: | SMD/SMT |
| Package / Case: | BGA-84 |
| Supplier Package | TW-BGA |
| Product Category: | DRAM |
| Chip Density (bit) | 512M |
| Moisture Sensitive: | Yes |
| Тип памяти | SDRAM |
| Supply Current - Max: | 105 mA |
| Supply Voltage - Max: | 1.9 V |
| Supply Voltage - Min: | 1.7 V |
| Operating Current (mA) | 205 |
| Объем памяти | 512Мбит |
| Maximum Access Time (ns) | 0.4 |
| Maximum Clock Frequency: | 400 MHz |
| Maximum Clock Rate (MHz) | 800 |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 8M |
| Number of Bits/Word (bit) | 16 |
| Number of I/O Lines (bit) | 16 |
| Supplier Temperature Grade | Industrial |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 1.9 |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Напряжение питания, В | 1.8 |
| Factory Pack Quantity: Factory Pack Quantity: | 209 |