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IRS21867STRPBF, IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8

IRS21867STRPBF, IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8

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Код товара
8070071081
Артикул
IRS21867STRPBF
Бренд
INFINEON TECHNOLOGIES AG.
PPAP
No
RoHS
Details
Type
IGBT|MOSFET
Brand
Infineon Technologies
Цена по запросу
(от 644 ₽)

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Описание

Высоковольтный, высокоскоростной силовой МОП-транзистор Infineon и IGBT-драйвер с независимыми выxодными каналами высокого и низкого напряжения.

Технические параметры

PPAPNo
RoHSDetails
TypeIGBT|MOSFET
BrandInfineon Technologies
EU RoHSCompliant
ProductHalf-Bridge Drivers
MountingSurface Mount
ECCN (US)EAR99
Fall Time18ns
PackagingTube
Pin Count8
Rise Time22 ns
AutomotiveNo
Lead ShapeGull-wing
Logic TypeCMOS, LSTTL
Вес, г0.14
Driver TypeHigh and Low Side
PCB changed8
Part StatusLTB
Unit Weight0.019048 oz
ManufacturerInfineon
Package TypeSOIC-8
Mounting StyleSMD/SMT
Output Current4 A
Package / CaseSOIC-8
Supply Voltage6.8 → 20V
Product CategoryGate Drivers
Special FeaturesUnder Voltage Lockout
Supplier PackageSOIC N
Number of Drivers2
Number of Outputs2
Driver ConfigurationNon-Inverting
Supply Voltage - Max20 V
Supply Voltage - Min10 V
Factory Pack Quantity2500
Reference Voltage (V)600(Max)
Standard Package NameSO
Maximum Fall Time (ns)30
Maximum Rise Time (ns)38
Pd - Power Dissipation0.625 W
Peak Output Current (A)4(Typ)
Operating Supply Current120 uA
Input Logic CompatibilityCMOS|LSTTL|3.3V|5V
Maximum Turn-On Delay Time170 ns
Maximum Turn-Off Delay Time170 ns
High and Low Sides DependencyIndependent
Maximum Operating Temperature+125 C
Minimum Operating Temperature-40 C
Maximum Power Dissipation (mW)625
Maximum Operating Temperature (°C)125
Maximum Propagation Delay Time (ns)250
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)20
Minimum Operating Supply Voltage (V)10
Typical Input Low Threshold Voltage (V)0.8(Max)
Typical Input High Threshold Voltage (V)2.5(Min)

Техническая документация