IRFR9210TRPBF, MOSFETs TO252 200V 1.9A P-CH MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025613679
- Артикул
- IRFR9210TRPBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 83 ₽)
Минимальный заказ: 2000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 200V 1.9A 3-контактный (2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.14 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 100 |
| Process Technology | HEXFET |
| Standard Package Name | TO-252 |
| Power Dissipation (Pd) | 2.5W;25W |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 12 |
| Total Gate Charge (Qg@Vgs) | 8.9nC@10V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 170pF@25V |
| Continuous Drain Current (Id) | 1.9A |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 8.9(Max) |
| Typical Gate Charge @ Vgs (nC) | 8.9(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 8 |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 11 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.9 |
| Typical Input Capacitance @ Vds (pF) | 170@25V |
| Maximum Drain Source Resistance (mOhm) | 3000@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |