IRFR9120TRLPBF, MOSFETs TO252 100V 5.6A P-CH MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025625677
- Артикул
- IRFR9120TRLPBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 160 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 100V 5.6A 3-контактный (2+Tab) DPAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.14 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 100 |
| Process Technology | HEXFET |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 29 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 18(Max) |
| Typical Gate Charge @ Vgs (nC) | 18(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 170 |
| Typical Turn-On Delay Time (ns) | 9.6 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 6 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Maximum Diode Forward Voltage (V) | 6.3 |
| Typical Gate to Drain Charge (nC) | 9(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 3(Max) |
| Typical Reverse Recovery Time (ns) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.6 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 390@25V |
| Typical Reverse Recovery Charge (nC) | 330 |
| Maximum Drain Source Resistance (mOhm) | 600@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 22 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 45@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |