IRF9530SPBF, MOSFETs TO263 100V 12A P-CH MOSFET
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- Код товара
- 8025501362
- Артикул
- IRF9530SPBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- Case
- D2PAK, TO263
- PPAP
- No
- RoHS
- Details
Цена по запросу
(от 190 ₽)
Минимальный заказ: 50 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 100V 12A 3-контактный (2+Tab) D2PAK
Технические параметры
| Tab | Tab |
| Case | D2PAK, TO263 |
| PPAP | No |
| RoHS | Details |
| Brand | Vishay Semiconductors |
| Width | 9.02mm |
| Height | 4.83 mm |
| Length | 10.67 mm |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.14 |
| Gate charge | 38nC |
| PCB changed | 2 |
| Part Status | Active |
| Unit Weight | 0.050717 oz |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Vishay |
| Package Type | D2PAK(TO-263) |
| Polarisation | unipolar |
| Configuration | Single |
| Drain current | -8.2A |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3 |
| Kind of channel | enhanced |
| Kind of package | tube |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 100 |
| Power dissipation | 88W |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±20V |
| On-state resistance | 0.3Ω |
| Transistor Material | Si |
| Drain-source voltage | -100V |
| Factory Pack Quantity | 800 |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 39 |
| Typical Rise Time (ns) | 52 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 3.7 W |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Resistance (Ohm) | 3.3 |
| Maximum Operating Temperature | +175 °C |
| Minimum Gate Resistance (Ohm) | 0.4 |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 3700 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 38(Max) |
| Typical Gate Charge @ Vgs (nC) | 38(Max)10V |
| Maximum Drain Source Resistance | 300 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 340 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 6.8 |
| Typical Turn-Off Delay Time (ns) | 31 |
| Maximum Diode Forward Voltage (V) | 6.3 |
| Typical Gate to Drain Charge (nC) | 21(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 6.8(Max) |
| Typical Reverse Recovery Time (ns) | 120 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 860 25V |
| Typical Reverse Recovery Charge (nC) | 460 |
| Maximum Drain Source Resistance (mOhm) | 300 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 48 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 93 25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |