IRF540STRLPBF, MOSFETs TO263 100V 28A N-CH MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025547248
- Артикул
- IRF540STRLPBF
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Tab
- Tab
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 65 ₽)
Минимальный заказ: 800 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 100V 28A 3-контактный (2+Tab) D2PAK T/R
Технические параметры
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.14 |
| PCB changed | 2 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 25 |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 43 |
| Typical Rise Time (ns) | 44 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3700 |
| Typical Gate Charge @ 10V (nC) | 72(Max) |
| Typical Gate Charge @ Vgs (nC) | 72(Max)10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 560 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 5.8 |
| Typical Turn-Off Delay Time (ns) | 53 |
| Maximum Diode Forward Voltage (V) | 2.5 |
| Typical Gate to Drain Charge (nC) | 32(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 11(Max) |
| Typical Reverse Recovery Time (ns) | 180 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 28 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 1700 25V |
| Typical Reverse Recovery Charge (nC) | 1300 |
| Maximum Drain Source Resistance (mOhm) | 77 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 110 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 120 25V |