IMX8T108, Транзистор: PNP
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014888103
- Артикул
- IMX8T108
- Бренд
- Rohm
- Brand
- ROHM Semiconductor
- Width
- 1.6 mm
- Height
- 1.1 mm
- Length
- 2.9 mm
Цена по запросу
(от 11,27 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP
Технические параметры
| Brand | ROHM Semiconductor |
| Width | 1.6 mm |
| Height | 1.1 mm |
| Length | 2.9 mm |
| Series | IMX8 |
| Packaging | Cut Tape or Reel |
| Вес, г | 0.03 |
| Subcategory | Transistors |
| Manufacturer | ROHM Semiconductor |
| Product Type | BJTs - Bipolar Transistors |
| Корпус | SC74 |
| Configuration | Dual |
| Mounting Style | SMD/SMT |
| Part # Aliases | IMX8 |
| Transistor Type | 2 NPN |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Operating Temperature | - |
| Collector Current (Ic) | 50mA |
| Pd - Power Dissipation | 300 mW |
| Power Dissipation (Pd) | 300mW |
| DC Current Gain HFE Max | 820 |
| Gain Bandwidth Product FT | 140 MHz |
| Transition Frequency (fT) | 140MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Collector- Base Voltage VCBO | 120 V |
| Continuous Collector Current | 50 mA |
| DC Current Gain (hFE@Ic,Vce) | 180@2mA, 6V |
| Maximum DC Collector Current | 0.05 A |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| DC Collector/Base Gain Hfe Min | 180 |
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector- Emitter Voltage VCEO Max | 120 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 120V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@10mA, 1mA |