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IHW40N120R5XKSA1,IGBT, 80 A, 1.55 V, 394 W, 1.2 kV, TO-247, 3 Pins

IHW40N120R5XKSA1,IGBT, 80 A, 1.55 V, 394 W, 1.2 kV, TO-247, 3 Pins

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Код товара
8000883753
Артикул
IHW40N120R5XKSA1
Бренд
INFINEON TECHNOLOGIES AG.
Case
TO247-3
ECCN
EAR99
HTSUS
8541.29.0095
Series
TrenchStopв„ў ->
Цена по запросу
(от 790 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Ограничитель траншейного поля IGBT 1200V 80A 394W со сквозным отверстием PG-TO247-3

Технические параметры

CaseTO247-3
ECCNEAR99
HTSUS8541.29.0095
SeriesTrenchStopв„ў ->
PackageTube
MountingThrough Hole
IGBT TypeTrench Field Stop
PackagingRail/Tube
Pin Count3+Tab
Input TypeStandard
TechnologyTRENCHSTOP™ RC
Вес, г0.4
Gate Charge310nC
Power - Max394W
RoHS StatusROHS3 Compliant
Channel TypeN
ManufacturerINFINEON TECHNOLOGIES
Package TypeTO-247
REACH StatusREACH Unaffected
Rad HardenedNo
ConfigurationSingle
Mounting TypeThrough Hole
Turn-off time440ns
Package / CaseTO-247-3
Test Condition600V, 40A, 10Ohm, 15V
Kind of packagetube
Switching Energy1.6mJ (off)
Collector current40A
Power dissipation197W
Type of transistorIGBT
Base Product NumberIHW40N120 ->
Gate-emitter voltage±20V
Operating Temperature-40В°C ~ 175В°C (TJ)
Td (on/off) @ 25В°C-/420ns
Collector Current (DC)80(A)
Supplier Device PackagePG-TO247-3
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 40A
Pulsed collector current120A
Collector-emitter voltage1.2kV
Maximum Power Dissipation394 W
Operating Temperature (Max)175C
Operating Temperature (Min)-40C
Maximum Gate Emitter Voltage±20 V, ±25 V
Gate to Emitter Voltage (Max)±20(V)
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)120A
Moisture Sensitivity Level (MSL)1 (Unlimited)
Features of semiconductor devicesreverse conducting IGBT(RC-IGBT)
Maximum Collector Emitter Voltage1200 V
Maximum Continuous Collector Current80 A
Operating Temperature ClassificationAutomotive
Voltage - Collector Emitter Breakdown (Max)1200V

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