IGB50N65S5ATMA1,IGBT, 80 A, 1.35 V, 270 W, 650 V, TO-263 (D2PAK), 3 Pins
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- Код товара
- 8000374135
- Артикул
- IGB50N65S5ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand
- Infineon
- Brand:
- Infineon Technologies
- Pin Count
- 3
- Packaging:
- Reel, Cut Tape
Цена по запросу
(от 493 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: IGBT, 650В, 63А, 135Вт, D2PAK Характеристики Категория Транзистор Тип БТИЗ Вид IGBT
Технические параметры
| Brand | Infineon |
| Brand: | Infineon Technologies |
| Pin Count | 3 |
| Packaging: | Reel, Cut Tape |
| Вес, г | 1 |
| Technology: | Si |
| Channel Type | N |
| Package Type | PG-TO263 |
| Subcategory: | IGBTs |
| Configuration | Single |
| Manufacturer: | Infineon |
| Package/Case: | D2PAK-3(TO-263-3) |
| Product Type: | IGBT Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | IGB50N65S5 SP001502566 |
| Product Category: | IGBT Transistors |
| Number of Transistors | 1 |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 270 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 270 W |
| Maximum Gate Emitter Voltage | 30V |
| Gate-Emitter Leakage Current: | 50 uA |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Maximum Collector Emitter Voltage | 650 V |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Continuous Collector Current Ic Max: | 80 A |
| Maximum Continuous Collector Current | 80 A |
| Collector-Emitter Saturation Voltage: | 1.35 V |
| Continuous Collector Current at 25 C: | 80 A |