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Фототранзисторы BPW85B

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Код товара
8971989155
Бренд
VISHAY INTERTECHNOLOGY INC.
ECCN
EAR99
PPAP
No
Type
Chip
HTSUS
8541.40.7080
Цена по запросу
(от 78,70 ₽)
Минимальный заказ: 8 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Фототранзистор 3мм/450-1080нм/прозрачный/25°

Технические параметры

ECCNEAR99
PPAPNo
TypeChip
HTSUS8541.40.7080
Width3.4mm
PackageBulk
Diameter3.4
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBulk
Pin Count2
AutomotiveNo
Lead ShapeThrough Hole
Lens ColorClear
Wavelength850nm
Вес, г0.13
OrientationTop View
PCB changed2
Part StatusActive
Power - Max100mW
RoHS StatusROHS3 Compliant
Package Type3mm(T-1)
КорпусT1(3mm)
Mounting TypeThrough Hole
Viewing Angle50В°
Number of Pins2
Package / CaseRadial
Wavelength Typ850nm; Viewing Angle
Lens Shape TypeDomed
Supplier PackageT-1
Collector Current50mA
Typical Fall Time2.3µs
Typical Rise Time2µs
Number of Channels1
Spectrums DetectedInfrared, Visible Light
Base Product NumberBPW85 ->
Viewing OrientationTop View
Maximum Dark Current200nA
Peak Wavelength (nm)850
Phototransistor TypePhototransistor
Maximum Light Current4000µA
Operating Temperature-40В°C ~ 100В°C (TA)
Fabrication TechnologyNPN Transistor
Angle of Half Sensitivity50 °
Current - Dark (Id) (Max)200nA
Maximum Dark Current (nA)200
Maximum Light Current (uA)4000
Maximum Wavelength Detected1080nm
Minimum Wavelength Detected450nm
Number of Channels per Chip1
Spectral Range of Sensitivity450 → 1080 nm
Current - Collector (Ic) (Max)100mA
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)100
Moisture Sensitivity Level (MSL)1 (Unlimited)
Half Intensity Angle Degrees (°)50
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Emitter-Collector Voltage (V)5
Voltage - Collector Emitter Breakdown (Max)70V
Maximum Collector-Emitter Saturation Voltage (V)0.3

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