Фототранзисторы BPW85B
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001985779
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- ECCN
- EAR99
- PPAP
- No
- Type
- Chip
- HTSUS
- 8541.40.7080
Цена по запросу
(от 59,06 ₽)
Минимальный заказ: 2 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Фототранзистор, 3мм, -p макс: 850нм, 70В, 50°, Линза: прозрачная
Технические параметры
| ECCN | EAR99 |
| PPAP | No |
| Type | Chip |
| HTSUS | 8541.40.7080 |
| Package | Bulk |
| Diameter | 3.4 |
| Material | Silicon |
| Mounting | Through Hole |
| Polarity | NPN |
| ECCN (US) | EAR99 |
| Packaging | Bulk |
| Pin Count | 2 |
| Automotive | No |
| Lead Shape | Through Hole |
| Lens Color | Clear |
| Wavelength | 850nm |
| Вес, г | 0.138 |
| Orientation | Top View |
| PCB changed | 2 |
| Part Status | Active |
| Power - Max | 100mW |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Through Hole |
| Viewing Angle | 50В° |
| Package / Case | Radial |
| Wavelength Typ | 850nm; Viewing Angle |
| Lens Shape Type | Domed |
| Supplier Package | T-1 |
| Base Product Number | BPW85 -> |
| Viewing Orientation | Top View |
| Peak Wavelength (nm) | 850 |
| Phototransistor Type | Phototransistor |
| Operating Temperature | -40В°C ~ 100В°C (TA) |
| Fabrication Technology | NPN Transistor |
| Current - Dark (Id) (Max) | 200nA |
| Maximum Dark Current (nA) | 200 |
| Maximum Light Current (uA) | 4000 |
| Number of Channels per Chip | 1 |
| Current - Collector (Ic) (Max) | 100mA |
| Maximum Collector Current (mA) | 50 |
| Maximum Power Dissipation (mW) | 100 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Half Intensity Angle Degrees (°) | 50 |
| Maximum Operating Temperature (°C) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |