Фототранзисторы BPV11F
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8000159446
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.40.80.00
- RoHS
- Details
- Type
- IR Chip
- Brand
- Vishay Semiconductors
Цена по запросу
(от 79,23 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Фототранзистор 5мм/900-980нм/15°
Технические параметры
| HTS | 8541.40.80.00 |
| RoHS | Details |
| Type | IR Chip |
| Brand | Vishay Semiconductors |
| Width | 5.75 mm |
| Height | 8.6 mm |
| Length | 5.75 mm |
| EU RoHS | Compliant |
| Product | Phototransistors |
| Diameter | 5.75 |
| Material | Silicon |
| Mounting | Through Hole |
| Polarity | NPN |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 2 |
| Lead Shape | Through Hole |
| Wavelength | 930 nm |
| Вес, г | 0.44 |
| PCB changed | 2 |
| Part Status | Active |
| Dark Current | 50 nA |
| Manufacturer | Vishay |
| Package Type | 5mm(T-1 3/4) |
| Корпус | LED5MM3L |
| Монтаж | THT |
| Light Current | 9 mA |
| Mounting Type | Through Hole |
| Cut-Off Filter | Visible Cut-off |
| Mounting Style | Through Hole |
| Number of Pins | 2 |
| Package / Case | T-1 3/4 |
| Package Height | 8.6 |
| Lens Shape Type | Domed |
| Peak Wavelength | 930 nm |
| Lens Color/Style | Water Clear |
| Product Category | Phototransistors |
| Supplier Package | T-1 3/4 |
| Collector Current | 50mA |
| Typical Fall Time | 5µs |
| Typical Rise Time | 6µs |
| Number of Channels | 1 |
| Spectrums Detected | Infrared |
| Viewing Orientation | Top View |
| Maximum Dark Current | 50nA |
| Peak Wavelength (nm) | 930 |
| Phototransistor Type | Phototransistor |
| Factory Pack Quantity | 2000 |
| Maximum Light Current | 9000µA |
| Standard Package Name | T-1 3/4 |
| Fabrication Technology | NPN Transistor |
| Pd - Power Dissipation | 150 mW |
| Operating Supply Voltage | 5 V |
| Angle of Half Sensitivity | 30 ° |
| Maximum Dark Current (nA) | 50 |
| Maximum Light Current (uA) | 9000(Typ) |
| Maximum Wavelength Detected | 980nm |
| Minimum Wavelength Detected | 900nm |
| Number of Channels per Chip | 1 |
| Half Intensity Angle Degrees | 15 deg |
| Maximum Operating Temperature | +100 C |
| Minimum Operating Temperature | -40 C |
| Spectral Range of Sensitivity | 900 → 980 nm |
| Maximum Collector Current (mA) | 50 |
| Maximum Power Dissipation (mW) | 150 |
| Half Intensity Angle Degrees (°) | 30 |
| Maximum On-State Collector Current | 50 mA |
| Collector- Emitter Voltage VCEO Max | 70 V |
| Collector-Emitter Breakdown Voltage | 70 V |
| Maximum Operating Temperature (°C) | 100 |
| Collector-Emitter Saturation Voltage | 130 mV |
| Maximum Collector-Emitter Voltage (V) | 70 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |