FF800R12KE7HPSA1 Single Collector, Single Emitter, Single Gate IGBT, 800 A 1200 V, 3-Pin AG-62MMHB, Through
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8050720947
- Артикул
- FF800R12KE7HPSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Brand:
- Infineon Technologies
- Series:
- FFXR12KX7H
- Mounting
- Screw
Цена по запросу
(от 94 340 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный IGBT-модуль N-CH 1200V 800A с 7-контактным лотком
Технические параметры
| PPAP | No |
| Brand: | Infineon Technologies |
| Series: | FFXR12KX7H |
| Mounting | Screw |
| Product: | IGBT Silicon Modules |
| ECCN (US) | EAR99 |
| Pin Count | 7 |
| Automotive | No |
| Packaging: | Tray |
| Вес, г | 0.14 |
| PCB changed | 7 |
| Part Status | Active |
| Technology: | IGBT7-E7 |
| Channel Type | N |
| Subcategory: | IGBTs |
| Configuration | Dual |
| Manufacturer: | Infineon |
| Product Type: | IGBT Modules |
| Configuration: | Dual |
| Mounting Style: | Chassis Mount |
| Part # Aliases: | FF800R12KE7 SP005432766 |
| Product Category: | IGBT Modules |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -40 |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.75 V |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 800 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Typical Collector Emitter Saturation Voltage (V) | 1.5 |