FF6MR12W2M1HPB11BPSA1, MOSFET Modules 1200 V CoolSiC Mosfet Half-Bridge Module
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8026932290
- Артикул
- FF6MR12W2M1HPB11BPSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Type:
- Half Bridge
- Brand:
- Infineon Technologies
- Fall Time:
- 30 ns
- Packaging:
- Tray
Цена по запросу
(от 37 950 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | Half Bridge |
| Brand: | Infineon Technologies |
| Fall Time: | 30 ns |
| Packaging: | Tray |
| Rise Time: | 18.7 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Discrete and Power Modules |
| Manufacturer: | Infineon |
| Package/Case: | 106.4 mm x 61.4 mm x 30.5 mm |
| Product Type: | MOSFET Modules |
| Configuration: | Dual |
| Mounting Style: | Screw Mount |
| Part # Aliases: | FF6MR12W2M1HP_B11 SP005634513 |
| Product Category: | MOSFET Modules |
| Transistor Polarity: | N-Channel |
| Vf - Forward Voltage: | 5.65 V |
| Factory Pack Quantity: | 18 |
| Vgs - Gate-Source Voltage: | -10 V, +20 V |
| Typical Turn-On Delay Time: | 20.4 ns |
| Typical Turn-Off Delay Time: | 62.6 ns |
| Id - Continuous Drain Current: | 200 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Rds On - Drain-Source Resistance: | 5.63 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 5.55 V |