FF17MR12W1M1HB17BPSA1, MOSFET Modules EASY
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8032620106
- Артикул
- FF17MR12W1M1HB17BPSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Fall Time:
- 21 ns
- Packaging:
- Tray
- Rise Time:
- 52 ns
Цена по запросу
(от 12 510 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Fall Time: | 21 ns |
| Packaging: | Tray |
| Rise Time: | 52 ns |
| Вес, г | 1 |
| Technology: | SiC |
| Subcategory: | Discrete and Power Modules |
| Manufacturer: | Infineon |
| Package/Case: | 48 mm x 33.8 mm x 12 mm |
| Product Type: | MOSFET Modules |
| Configuration: | Dual |
| Mounting Style: | Press Fit |
| Part # Aliases: | FF17MR12W1M1H_B17 SP005559517 |
| Product Category: | MOSFET Modules |
| Transistor Polarity: | N-Channel |
| Vf - Forward Voltage: | 5.35 V |
| Factory Pack Quantity: | 24 |
| Pd - Power Dissipation: | 20 mW |
| Vgs - Gate-Source Voltage: | -7 V, +20 V |
| Typical Turn-On Delay Time: | 33 ns |
| Typical Turn-Off Delay Time: | 70 ns |
| Id - Continuous Drain Current: | 50 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Rds On - Drain-Source Resistance: | 16.2 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 5.15 V |