F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole
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- Код товара
- 8052997311
- Артикул
- F3L225R12W3H3B11BPSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- Product:
- IGBT Silicon Modules
- Packaging:
- Tray
- Вес, г
- 0.14
Цена по запросу
(от 48 630 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Infineon Technologies |
| Product: | IGBT Silicon Modules |
| Packaging: | Tray |
| Вес, г | 0.14 |
| Technology: | Si |
| Subcategory: | IGBTs |
| Manufacturer: | Infineon |
| Product Type: | IGBT Modules |
| Configuration: | Half Bridge |
| Mounting Style: | Screw Mount |
| Package / Case: | EasyPACK |
| Part # Aliases: | F3L225R12W3H3_B11 SP005675779 |
| Product Category: | IGBT Modules |
| Pd - Power Dissipation: | 20 mW |
| Gate-Emitter Leakage Current: | 100 nA |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.55 V |
| Continuous Collector Current at 25 C: | 175 A |
| Factory Pack Quantity: Factory Pack Quantity: | 8 |