Драйверы MOSFET и IGBT PMN70EPEX
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8069475969
- Бренд
- Nexperia B.V.
- Brand:
- Nexperia
- Fall Time:
- 7.5 ns
- Rise Time:
- 8 ns
- Вес, г
- 0.29
Цена по запросу
(от 43 ₽)
Минимальный заказ: 1100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Nexperia |
| Fall Time: | 7.5 ns |
| Rise Time: | 8 ns |
| Вес, г | 0.29 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Nexperia |
| Package/Case: | TSOP-6 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934069605115 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11.5 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 1.4 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 5 ns |
| Typical Turn-Off Delay Time: | 19 ns |
| Id - Continuous Drain Current: | 4.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 12.6 S |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |