Драйверы MOSFET и IGBT IRFP340PBF
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025466819
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.10.00.80
- Tab
- Tab
- Case
- TO247AC
- EU RoHS
- Compliant
Цена по запросу
(от 526 ₽)
Минимальный заказ: 25 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор Vishay является N-канальным, корпус TO-247-3 - это продукт нового поколения с напряжением сток-исток 400 В и максимальным напряжением затвор-исток 20 В.
Технические параметры
| HTS | 8541.10.00.80 |
| Tab | Tab |
| Case | TO247AC |
| EU RoHS | Compliant |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 0.14 |
| Gate charge | 62nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VISHAY |
| Polarisation | unipolar |
| Configuration | Single |
| Drain current | 6.9A |
| Package Width | 5.21(Max) |
| Package Height | 20.7(Max) |
| Package Length | 15.87(Max) |
| Kind of channel | enhanced |
| Kind of package | tube |
| Product Category | Power MOSFET |
| Supplier Package | TO-247AC |
| Maximum IDSS (uA) | 25 |
| Power dissipation | 150W |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±20V |
| On-state resistance | 0.55Ω |
| Drain-source voltage | 400V |
| Standard Package Name | TO-247 |
| Typical Fall Time (ns) | 24 |
| Typical Rise Time (ns) | 27 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 150000 |
| Typical Gate Charge @ 10V (nC) | 62(Max) |
| Typical Gate Charge @ Vgs (nC) | 62(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 400 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 400 |
| Typical Gate Plateau Voltage (V) | 5.9 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Diode Forward Voltage (V) | 2 |
| Typical Gate to Drain Charge (nC) | 30(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 10(Max) |
| Typical Reverse Recovery Time (ns) | 330 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 11 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1400@25V |
| Typical Reverse Recovery Charge (nC) | 2500 |
| Maximum Drain Source Resistance (mOhm) | 550@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 44 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 130@25V |