Драйверы MOSFET и IGBT BUK7K52-60EX
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8067087632
- Бренд
- Nexperia B.V.
- Type
- 2 N-Channel
- Grade
- Automotive
- Brand:
- Nexperia
- Fall Time:
- 5.4 ns
Цена по запросу
(от 44 ₽)
Минимальный заказ: 214 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
60 В 15,4 А 45 Мом при 5 А, 10 В 32 Вт 4 В при 1 мА 2 N-канальныx МОП-транзистора SOT-1205 ROHS
Технические параметры
| Type | 2 N-Channel |
| Grade | Automotive |
| Brand: | Nexperia |
| Fall Time: | 5.4 ns |
| Rise Time: | 5.1 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.14 |
| Power - Max | 32W |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | 2 N-Channel(Dual) |
| Manufacturer: | Nexperia |
| Mounting Type | Surface Mount |
| Package/Case: | LFPAK-33-8 |
| Product Type: | MOSFETs |
| Qualification | AEC-Q100 |
| Configuration: | Dual |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934067954115 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 9.2 nC |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Factory Pack Quantity: | 1500 |
| Power Dissipation (Pd) | 32W |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5A, 10V |
| Pd - Power Dissipation: | 32 W |
| Supplier Device Package | LFPAK56D |
| Total Gate Charge (Qg@Vgs) | 9.2nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 4.3 ns |
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 10V |
| Input Capacitance (Ciss@Vds) | 535pF@25V |
| Typical Turn-Off Delay Time: | 8.4 ns |
| Continuous Drain Current (Id) | 15.4A |
| Drain to Source Voltage (Vdss) | 60V |
| Id - Continuous Drain Current: | 15.4 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 535pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 15.4A |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |