BT137-600G,127, Симистор; 600В; 8А; TO220AB; Igt: 50/100мА; Ifsm: 65А; 4Q
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- Код товара
- 8018902269
- Артикул
- BT137-600G,127
- Бренд
- WeEn Semiconductors
- Case
- TO220AB
- Brand:
- WeEn Semiconductors
- Mounting
- THT
- Technology
- 4Q
Цена по запросу
(от 90,78 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Высокое напряжение NEC 600 В + Защита цепи
Технические параметры
| Case | TO220AB |
| Brand: | WeEn Semiconductors |
| Mounting | THT |
| Technology | 4Q |
| Вес, г | 2.1 |
| Gate current | 50/100mA |
| Manufacturer | WeEn Semiconductors |
| Subcategory: | Thyristors |
| Manufacturer: | WeEn Semiconductors |
| Product Type: | Triacs |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220AB-3 |
| Part # Aliases: | 933599110127 |
| Max. load current | 8A |
| On-State Voltage: | 1.3 V |
| Product Category: | Triacs |
| Type of thyristor | triac |
| Max. off-state voltage | 0.6kV |
| Holding Current Ih Max: | 40 mA |
| Gate Trigger Current - Igt: | 30 mA |
| Gate Trigger Voltage - Vgt: | 0.7 V |
| Max. forward impulse current | 65A |
| Maximum Operating Temperature: | +125 C |
| On-State RMS Current - It RMS: | 8 A |
| Non Repetitive On-State Current: | 71 A |
| Features of semiconductor devices | sensitive gate |
| Off-State Leakage Current @ VDRM IDRM: | 100 uA |
| Rated Repetitive Off-State Voltage VDRM: | 600 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |