BSZ100N03MSGATMA1, Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001293864
- Артикул
- BSZ100N03MSGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 46 ₽)
Минимальный заказ: 5000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH 30V 10A 8-контактный TSDSON EP T/R
Технические параметры
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.04 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Supplier Package | TSDSON EP |
| Process Technology | OptiMOS |
| Полярность | N-Channel |
| Standard Package Name | SON |
| Typical Fall Time (ns) | 2.4 |
| Typical Rise Time (ns) | 2.8 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2100 |
| Typical Gate Charge @ 10V (nC) | 17 |
| Typical Gate Charge @ Vgs (nC) | 8.3@4.5V|17@10V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 3.8 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 10 |
| Typical Input Capacitance @ Vds (pF) | 1300@15V |
| Maximum Drain Source Resistance (mOhm) | 9.1@10V |
| Выходное напряжение, В | 30 |
| Максимальный ток нагрузки, А | 10 |
| Максимальное входное напряжение, В | 40 |