BSS123-R1-00001, MOSFETs SOT23 100V .17A N-CH
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8027821748
- Артикул
- BSS123-R1-00001
- Бренд
- PanJit Semiconductors
- Type
- 1PCSNChannel
- FET Type
- N-Channel
- Fall Time
- 20 ns
- Packaging
- Reel
Цена по запросу
(от 5,20 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы SOT23 100V .17A N-CH
Технические параметры
| Type | 1PCSNChannel |
| FET Type | N-Channel |
| Fall Time | 20 ns |
| Packaging | Reel |
| Rise Time | 19 ns |
| Vgs (Max) | ±20V |
| Technology | Si |
| Вес, г | 0.14 |
| Channel Mode | Enhancement |
| Product Type | MOSFETs |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Transistor Type | 1 N-Channel |
| Qg - Gate Charge | 1.8 nC |
| Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Transistor Polarity | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Pd - Power Dissipation | 500 mW |
| Power Dissipation (Pd) | 500mW |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| Power Dissipation (Max) | 500mW(Ta) |
| Supplier Device Package | SOT-23 |
| Vgs - Gate-Source Voltage | -20 V, 20 V |
| Total Gate Charge (Qg@Vgs) | 1.8nC@10V |
| Typical Turn-On Delay Time | 3.4 ns |
| Typical Turn-Off Delay Time | 8.2 ns |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 10 V |
| Input Capacitance (Ciss@Vds) | 45pF@25V |
| Continuous Drain Current (Id) | 170mA |
| Id - Continuous Drain Current | 170 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On - Drain-Source Resistance | 10 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 25 V |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Current - Continuous Drain (Id) @ 25°C | 170mA(Ta) |