Моя заявка (0)
BPW77NA, No Phototransistor Chip Silicon 850nm 3-Pin TO-206AA Bulk

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8001144508
Артикул
BPW77NA
Бренд
VISHAY INTERTECHNOLOGY INC.
HTS
8541.40.80.00
ECCN
EAR99
Type
IR Chip
HTSUS
8541.40.7080
Цена по запросу
(от 333 ₽)
Минимальный заказ: 74 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Фототранзисторы 850 нм, вид сверxу, TO-206AA, TO-18-3 Металлическая банка

Технические параметры

HTS8541.40.80.00
ECCNEAR99
TypeIR Chip
HTSUS8541.40.7080
EU RoHSCompliant
PackageBulk
Diameter5.5
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
PackagingBulk
Pin Count3
Lead ShapeThrough Hole
Wavelength850nm
Вес, г0.1
OrientationTop View
PCB changed3
Part StatusActive
Power - Max250mW
RoHS StatusROHS3 Compliant
Package TypeTO-18
Mounting TypeThrough Hole
Viewing Angle20В°
Number of Pins3
Package / CaseTO-206AA, TO-18-3 Metal Can
Package Height6.15
Lens Shape TypeDomed
Peak Wavelength850nm
Supplier PackageTO-206AA
Collector Current50mA
Typical Fall Time5µs
Typical Rise Time6µs
Number of Channels1
Spectrums DetectedInfrared, Visible Light
Base Product NumberBPW77 ->
Viewing OrientationTop View
Maximum Dark Current100nA
Peak Wavelength (nm)850
Phototransistor TypePhototransistor
Maximum Light Current15000µA
Operating Temperature-40В°C ~ 125В°C (TA)
Collector Current (Ic)50mA
Collector Dark Current100nA
Dissipation Power(Max)250mW
Fabrication TechnologyNPN Transistor
Angle of Half Sensitivity±10 °
Collector Emitter Voltage70V
Current - Dark (Id) (Max)100nA
Maximum Dark Current (nA)100
Maximum Light Current (uA)15000
Maximum Wavelength Detected1080nm
Minimum Wavelength Detected450nm
Number of Channels per Chip1
Spectral Range of Sensitivity450 → 1080 nm
Current - Collector (Ic) (Max)50mA
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)250
Moisture Sensitivity Level (MSL)1 (Unlimited)
Half Intensity Angle Degrees (°)20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Voltage - Collector Emitter Breakdown (Max)70V
Maximum Collector-Emitter Saturation Voltage (V)0.3

Техническая документация