SRAM, AS6C4016-55ZIN- 4Mbit
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- Код товара
- 8058401254
- Артикул
- AS6C4016-55ZIN
- Бренд
- Alliance Memory Inc
- Case
- TSOP44 II
- ECCN
- 3A991B2A
- RoHS
- Details
- Type
- Asynchronous
Цена по запросу
(от 1 030 ₽)
Минимальный заказ: 135 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание IC: SRAM memory; 256kx16bit; 2.7?5.5V; 55ns; TSOP44 II; parallel Характеристики Категория Микросхема Тип памяти Вид SRAM
Технические параметры
| Case | TSOP44 II |
| ECCN | 3A991B2A |
| RoHS | Details |
| Type | Asynchronous |
| Brand | Alliance Memory |
| HTSUS | 8542.32.0041 |
| Width | 10.3mm |
| Memory | 4Mb SRAM |
| Series | AS6C4016 |
| Package | Tray |
| IC width | 400mils |
| Mounting | SMD |
| Low Power | Yes |
| Packaging | Tray |
| Pin Count | 44 |
| Technology | SRAM - Asynchronous |
| Вес, г | 5 |
| Серия | AS6C |
| Access Time | 55ns |
| Memory Size | 4Mb (256K x 16) |
| Memory Type | Volatile |
| RoHS Status | ROHS3 Compliant |
| Timing Type | Asynchronous |
| Manufacturer | Alliance Memory |
| Organisation | 256k x 16 bit |
| Organization | 256 k x 16 |
| Package Type | TSOP |
| REACH Status | REACH Unaffected |
| Корпус | TSOP44 II |
| Memory Format | SRAM |
| Mounting Type | Surface Mount |
| Interface Type | Parallel |
| Kind of memory | asynchronous, SRAM |
| Mounting Style | SMD/SMT |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| Number of Words | 256k |
| Memory Interface | Parallel |
| Product Category | SRAM |
| Voltage - Supply | 2.7V ~ 5.5V |
| Address Bus Width | 18bit |
| Kind of interface | parallel |
| Operating voltage | 2.7…5.5V |
| Интерфейс | parallel |
| Memory organisation | 256kx16bit |
| Тип памяти | SRAM |
| Supply Current - Max | 60 mA |
| Supply Voltage - Max | 5.5 V |
| Supply Voltage - Min | 2.7 V |
| Factory Pack Quantity | 135 |
| Operating Temperature | -40В°C ~ 85В°C (TA) |
| Number of Bits per Word | 16bit |
| Supplier Device Package | 44-TSOP II |
| Объем памяти | 4Мбит |
| Maximum Random Access Time | 55ns |
| Type of integrated circuit | SRAM memory |
| Integrated circuit features | LPC |
| Operating Temperature Range | -40 C to+85 C |
| Maximum Operating Temperature | +85 C |
| Minimum Operating Temperature | -40 C |
| Write Cycle Time - Word, Page | 55ns |
| Maximum Operating Supply Voltage | 5.5 V |
| Minimum Operating Supply Voltage | 2.7 V |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |