APT10M11JVRU3, MOSFET Modules PM-MOSFET-5-SOT227
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005537189
- Артикул
- APT10M11JVRU3
- Бренд
- Microchip Technology
- Type:
- Power MOSFET
- Brand:
- Microchip Technology
- Product:
- MOSFET Modules
- Fall Time:
- 9 ns
Цена по запросу
(от 7 150 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | Power MOSFET |
| Brand: | Microchip Technology |
| Product: | MOSFET Modules |
| Fall Time: | 9 ns |
| Packaging: | Tube |
| Rise Time: | 48 ns |
| Вес, г | 30 |
| Technology: | Si |
| Subcategory: | Discrete and Power Modules |
| Manufacturer: | Microchip |
| Package/Case: | SOT-227-4 |
| Product Type: | MOSFET Modules |
| Configuration: | Single |
| Mounting Style: | Screw Mount |
| Product Category: | MOSFET Modules |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1 |
| Pd - Power Dissipation: | 450 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 16 ns |
| Typical Turn-Off Delay Time: | 51 ns |
| Id - Continuous Drain Current: | 142 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 11 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |