2N7002E-T1-GE3, MOSFET 60V 240mA 0.35W 3.0ohm @ 10V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025466958
- Артикул
- 2N7002E-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
- Pin Count
- 3
Цена по запросу
(от 21,56 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET; полевой; 60В; 0,24А; Idm: 1,3А; 0,22Вт; SOT23
Технические параметры
| PPAP | No |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.14 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 1.4(Max) |
| Package Length | 3.04(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 350 |
| Typical Gate Charge @ Vgs (nC) | 0.4@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.24 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 21@5V |
| Maximum Drain Source Resistance (mOhm) | 3000@10V |
| Maximum Positive Gate Source Voltage (V) | 20 |